HANDBOOK OF SILICON SEMICONDUCTOR METROLOGY
Editor: A.C. Diebold
© 2001 952 pp. $195.00
CONTENTS
1. SILICON SEMICONDUCTOR METROLOGY
2. TRANSISTOR FABRICATION METROLOGY: Gate Dielectric Metrology; Metrology for Ion Implant-
ation; MOS Device Characterization; Carrier Illumin-
ation Characterizing Ultra-Shallow Implants; Model-
ing Statistical Manufacturing Sensitivity & Process Control Metrology Needs for 0.18-um NMOSFETs
3. ON-CHIP INTERCONNECT METROLOGY: Overview
of Metrology for On-Chip Interconnect; Metrology for On-Chip Interconnect Dielectrics; Thin-Film Metrology Using Impulsive Stimulated Thermal Scattering (ISTS); Metal Interconnect Process Control Using Picosecond Ultrasonics; Sheet Resistance Measurements of Interconnect Films; Characterization of Low-k Dielectric-Constant
Materials; High-Resolution Profilometry for CMP and Etch Metrology
4. LITHOGRAPHY METROLOGY: Critical-Dimension Metrology and Scanning Electron Microscope; Scanned Probe Microscope Dimensional Metrology; Electrical CD
Metrology and Related Reference Materials; Metrology of Image Placement; Scatterometry for Semiconductor Metrology
5. DEFECT DETECTION AND CHARACTERIZATION: Unpatterned Wafer Detection; Particle and Defect Characterization; Calibration of Particle Detection systems; In-Situ Metrology
6. DATA MANAGEMENT: Metrology Data Management and Information Systems
7. ELECTRICAL MEASUREMNT-BASED STATISTICAL METROLOGY: Statistical Metrology, with Applications to Interconnect and Yield Modeling
8. OVERVIEWS OF KEY MEASUREMENT AND CALIBRATION TECHNOLGY: Physics of Optical Metrology of Silicon-Based Semiconductor Devices; Ultraviolet, Vacuum Ultraviolet, and Extreme Ultraviolet
Spectroscopy, Reflectometry, and Ellipsometry; Analysis of Thin-Layer Structures by X-Ray Reflectometry; Ion-Beam Methods; Electron Microscopy-Based Measurement of Feature Thickness and Calibration of Reference Materials; Status of Lithography Metrology as of the End of 2000.
Dr. Wolf's REVIEW
Published in July 2001. This book is the first of its kind. A complete reference on silicon semiconductor metrology. This handbook describes the cleanroom-based measurements used during IC manufacture: critical dimensions; film thickness; dopant concentrations and doping profiles in the various device regions; junction depth; particle and defect detection; in-situ and in-line CMP monitoring.
PRICE: $195.00

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