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HANDBOOK OF SILICON SEMICONDUCTOR METROLOGY
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Editor: A.C. Diebold
© 2001 952 pp. $195.00 |
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CONTENTS
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1. SILICON SEMICONDUCTOR METROLOGY 2. TRANSISTOR FABRICATION METROLOGY: Gate Dielectric Metrology; Metrology for Ion Implant- ation; MOS Device Characterization; Carrier Illumin- ation Characterizing Ultra-Shallow Implants; Model- ing Statistical Manufacturing Sensitivity & Process Control Metrology Needs for 0.18-um NMOSFETs 3. ON-CHIP INTERCONNECT METROLOGY: Overview of Metrology for On-Chip Interconnect; Metrology for On-Chip Interconnect Dielectrics; Thin-Film Metrology Using Impulsive Stimulated Thermal Scattering (ISTS); Metal Interconnect Process Control Using Picosecond Ultrasonics; Sheet Resistance Measurements of Interconnect Films; Characterization of Low-k Dielectric-Constant |
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| Materials; High-Resolution Profilometry for CMP and Etch Metrology 4. LITHOGRAPHY METROLOGY: Critical-Dimension Metrology and Scanning Electron Microscope; Scanned Probe Microscope Dimensional Metrology; Electrical CD Metrology and Related Reference Materials; Metrology of Image Placement; Scatterometry for Semiconductor Metrology 5. DEFECT DETECTION AND CHARACTERIZATION: Unpatterned Wafer Detection; Particle and Defect Characterization; Calibration of Particle Detection systems; In-Situ Metrology 6. DATA MANAGEMENT: Metrology Data Management and Information Systems 7. ELECTRICAL MEASUREMNT-BASED STATISTICAL METROLOGY: Statistical Metrology, with Applications to Interconnect and Yield Modeling 8. OVERVIEWS OF KEY MEASUREMENT AND CALIBRATION TECHNOLGY: Physics of Optical Metrology of Silicon-Based Semiconductor Devices; Ultraviolet, Vacuum Ultraviolet, and Extreme Ultraviolet Spectroscopy, Reflectometry, and Ellipsometry; Analysis of Thin-Layer Structures by X-Ray Reflectometry; Ion-Beam Methods; Electron Microscopy-Based Measurement of Feature Thickness and Calibration of Reference Materials; Status of Lithography Metrology as of the End of 2000. |
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Dr. Wolf's REVIEW
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| Published in July 2001. This book is the first of its kind. A complete reference on silicon semiconductor metrology. This handbook describes the cleanroom-based measurements used during IC manufacture: critical dimensions; film thickness; dopant concentrations and doping profiles in the various device regions; junction depth; particle and defect detection; in-situ and in-line CMP monitoring. |
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PRICE: $195.00
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Home | MicrochipManuf | Vol.1 | Vol.2 | Vol.3 | Vol.4 | LatticePressSeminars Contact & Shipping Info | Our Guarantee & Privacy Policy LATTICE PRESS Post Office Box 340 Sunset Beach CA 90742 USA Website: www.latticepress.com Ph: (714) 840-5010; FAX: (562) 592-1976 |
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© 2004 by LATTICE PRESS Sunset Beach CA - All Rights Reserved.
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